Giant magnetoresistance in single-layer graphene flakes with a gate-voltage-tunable weak antilocalization
نویسندگان
چکیده
منابع مشابه
Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus.
Two-dimensional black phosphorus (BP) has sparked enormous research interest due to its high carrier mobility, layer-dependent direct bandgap and outstanding in-plane anisotropic properties. BP is one of the few two-dimensional materials where it is possible to tune the bandgap over a wide energy range from the visible up to the infrared. In this article, we report the observation of a giant St...
متن کاملMagnetoresistance in single-layer graphene: weak localization and universal conductance fluctuation studies.
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate dependence of the elastic scattering terms suggests that the effect of t...
متن کاملWeak antilocalization in epitaxial graphene: evidence for chiral electrons.
Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak antilocalization in 2D samples manifests itself as a broad cusplike depression in the longitudinal resistance for magnetic fields 10 mT<B<5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with grap...
متن کاملGiant magnetoresistance in ultrasmall graphene based devices.
By computing spin-polarized electronic transport across a finite zigzag graphene ribbon bridging two metallic graphene electrodes, we demonstrate, as a proof of principle, that devices featuring 100% magnetoresistance can be built entirely out of carbon. In the ground state a short zigzag ribbon is an antiferromagnetic insulator which, when connecting two metallic electrodes, acts as a tunnel b...
متن کاملTunable floating-gate low-voltage transconductor
This paper presents a 6 transistor fully differential dualended low-voltage (ULV) FGUVMOS operational transconductance amplifier (FGUVMOS-OTA), and a Gm-C filter where the FGUVMOS-OTA is used. The OTA has rail-torail operation. A basic Gm-C filter implemented with the OTA is presented. The cut-off frequency of the filter is tunable over almost 6 decades with a supply voltage below 1V.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2013
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.88.195429